Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential

ABSTRACT: In this work are studied the intense laser effects on the impurity states in GaAs-Ga1−xAlxAs quantum wells under applied electric and magnetic fields. The electric field is taken oriented along the growth direction of the quantum well whereas the magnetic field is considered to be in-plane...

Full description

Autores:

Duque Echeverri, Carlos Alberto
Mora Ramos, Miguel Eduardo
Kasapoğlu, Esin
Sari, Huseyin
Sökmen, Ismail

Tipo de recurso:

Article of investigation

Fecha de publicación:

2011

Institución:

Universidad de Antioquia

Repositorio:

Repositorio UdeA

Idioma:

eng

OAI Identifier:

oai:bibliotecadigital.udea.edu.co:10495/30964

Acceso en línea:

https://hdl.handle.net/10495/30964

Palabra clave:

Centros de impurezas
Impurity centers
Pozos cuánticos
Quantum wells
Campos eléctricos
Electric fields
Campos magnéticos
Magnetic fields
Láser
Laser
http://aims.fao.org/aos/agrovoc/c_26026

Rights

openAccess

License

http://creativecommons.org/licenses/by/2.5/co/