Binding energy and density of shallow impurity states in GaAs–(Ga, Al)As quantum wells : effects of an applied hydrostatic stress

ABSTRACT: The effects of hydrostatic stress on the binding energy and the density of shallow-donor and shallow-acceptor impurity states in a GaAs–(Ga, Al)As quantum well are calculated using a variational procedure within the effective-mass approximation. Results are for different well widths and hy...

Full description

Autores:

López Ríos, Sonia Yaneth
Porras Montenegro, Nelson
Duque Echeverri, Carlos Alberto

Tipo de recurso:

Article of investigation

Fecha de publicación:

2003

Institución:

Universidad de Antioquia

Repositorio:

Repositorio UdeA

Idioma:

eng

OAI Identifier:

oai:bibliotecadigital.udea.edu.co:10495/4866

Acceso en línea:

http://hdl.handle.net/10495/4866

Palabra clave:

Hidrostática
Hydrostatics
Pozos cuánticos
Quantum wells
Energía de enlace
Binding energy
Aguas poco profundas
Estres hidrostático
Densidad de estados
Masa efectiva
Impurezas en GaAs

Rights

openAccess

License

https://creativecommons.org/licenses/by-nc-nd/4.0/