Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells
ABSTARCT: Mixing between Γ and X valleys of the conduction band in GaAs–Ga1–xAlxAs quantum wells is investigated taken into account the effect of applied hydrostatic pressure. This effect is introduced via the pressure-dependent values of the corresponding energy gaps and the main band parameters. T...
- Autores:
-
Duque Echeverri, Carlos Alberto
López Ríos, Sonia Yaneth
Mora Ramos, Miguel Eduardo
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2007
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/4839
- Acceso en línea:
- http://hdl.handle.net/10495/4839
- Palabra clave:
- Quantum wells
Pozos cuánticos
Hydrostatic pressure
Presión hidrostática
Quantum physical
Física cuántica
- Rights
- openAccess
- License
- https://creativecommons.org/licenses/by-nc-nd/4.0/
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| dc.title.spa.fl_str_mv |
Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells |
| title |
Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells |
| spellingShingle |
Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells Quantum wells Pozos cuánticos Hydrostatic pressure Presión hidrostática Quantum physical Física cuántica |
| title_short |
Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells |
| title_full |
Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells |
| title_fullStr |
Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells |
| title_full_unstemmed |
Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells |
| title_sort |
Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells |
| dc.creator.fl_str_mv |
Duque Echeverri, Carlos Alberto López Ríos, Sonia Yaneth Mora Ramos, Miguel Eduardo |
| dc.contributor.author.none.fl_str_mv |
Duque Echeverri, Carlos Alberto López Ríos, Sonia Yaneth Mora Ramos, Miguel Eduardo |
| dc.contributor.researchgroup.spa.fl_str_mv |
Grupo de Educación en Ciencias Experimentales y Matemáticas (GECEM) |
| dc.subject.lemb.none.fl_str_mv |
Quantum wells Pozos cuánticos Hydrostatic pressure Presión hidrostática Quantum physical Física cuántica |
| topic |
Quantum wells Pozos cuánticos Hydrostatic pressure Presión hidrostática Quantum physical Física cuántica |
| description |
ABSTARCT: Mixing between Γ and X valleys of the conduction band in GaAs–Ga1–xAlxAs quantum wells is investigated taken into account the effect of applied hydrostatic pressure. This effect is introduced via the pressure-dependent values of the corresponding energy gaps and the main band parameters. The mixing is considered along the lines of a phenomenological model. Variation of the confined ground state in the well as a function of the pressure is reported. The dependencies of the variationally calculated binding energy of a donor impurity with the hydrostatic pressure and well width are also presented. It is shown that the inclusion of the Γ–X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been observed for pressures above 20 kbar. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| publishDate |
2007 |
| dc.date.issued.none.fl_str_mv |
2007 |
| dc.date.accessioned.none.fl_str_mv |
2016-10-06T21:40:01Z |
| dc.date.available.none.fl_str_mv |
2016-10-06T21:40:01Z |
| dc.type.spa.fl_str_mv |
Artículo de investigación |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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https://purl.org/redcol/resource_type/ART |
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http://purl.org/coar/version/c_970fb48d4fbd8a85 |
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info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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publishedVersion |
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Duque Echeverri, C. A., López Ríos, S. Y. & Mora Ramos, M. E. (2007). Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells. Physica Status Solidi. B: Basic Research, 244(6), 1964-1970. |
| dc.identifier.issn.none.fl_str_mv |
0370-1972 |
| dc.identifier.uri.none.fl_str_mv |
http://hdl.handle.net/10495/4839 |
| dc.identifier.doi.none.fl_str_mv |
10.1002/pssb.200642377 |
| dc.identifier.eissn.none.fl_str_mv |
1521-3951 |
| identifier_str_mv |
Duque Echeverri, C. A., López Ríos, S. Y. & Mora Ramos, M. E. (2007). Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells. Physica Status Solidi. B: Basic Research, 244(6), 1964-1970. 0370-1972 10.1002/pssb.200642377 1521-3951 |
| url |
http://hdl.handle.net/10495/4839 |
| dc.language.iso.spa.fl_str_mv |
eng |
| language |
eng |
| dc.relation.citationendpage.spa.fl_str_mv |
1970 |
| dc.relation.citationissue.spa.fl_str_mv |
6 |
| dc.relation.citationstartpage.spa.fl_str_mv |
1964 |
| dc.relation.citationvolume.spa.fl_str_mv |
244 |
| dc.relation.ispartofjournal.spa.fl_str_mv |
Physica Status Solidi. B: Basic Research |
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https://creativecommons.org/licenses/by-nc-nd/4.0/ |
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http://creativecommons.org/licenses/by-nc-nd/2.5/co/ |
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Atribución-NoComercial-SinDerivadas 2.5 Colombia |
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Wiley - V C H Verlag GmbH & Co. KGaA |
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Duque Echeverri, Carlos AlbertoLópez Ríos, Sonia YanethMora Ramos, Miguel EduardoGrupo de Educación en Ciencias Experimentales y Matemáticas (GECEM)2016-10-06T21:40:01Z2016-10-06T21:40:01Z2007Duque Echeverri, C. A., López Ríos, S. Y. & Mora Ramos, M. E. (2007). Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells. Physica Status Solidi. B: Basic Research, 244(6), 1964-1970.0370-1972http://hdl.handle.net/10495/483910.1002/pssb.2006423771521-3951ABSTARCT: Mixing between Γ and X valleys of the conduction band in GaAs–Ga1–xAlxAs quantum wells is investigated taken into account the effect of applied hydrostatic pressure. This effect is introduced via the pressure-dependent values of the corresponding energy gaps and the main band parameters. The mixing is considered along the lines of a phenomenological model. Variation of the confined ground state in the well as a function of the pressure is reported. The dependencies of the variationally calculated binding energy of a donor impurity with the hydrostatic pressure and well width are also presented. It is shown that the inclusion of the Γ–X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been observed for pressures above 20 kbar. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)COL00080026application/pdfengWiley - V C H Verlag GmbH & Co. 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