Hydrostatic pressure effects on the Γ–X conduction band mixing and the binding energy of a donor impurity in GaAs–Ga1–xAlxAs quantum wells

ABSTARCT: Mixing between Γ and X valleys of the conduction band in GaAs–Ga1–xAlxAs quantum wells is investigated taken into account the effect of applied hydrostatic pressure. This effect is introduced via the pressure-dependent values of the corresponding energy gaps and the main band parameters. T...