Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

ABSTRACT: In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these...

Full description

Autores:

Duque Jiménez, Carlos Mario
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto

Tipo de recurso:

Article of investigation

Fecha de publicación:

2012

Institución:

Universidad de Antioquia

Repositorio:

Repositorio UdeA

Idioma:

eng

OAI Identifier:

oai:bibliotecadigital.udea.edu.co:10495/8367

Acceso en línea:

http://hdl.handle.net/10495/8367

Palabra clave:

Excitones
Nitruros
Pozos cuánticos
Quantum wells
Campos eléctricos
Electric fields
Campo láser intenso
Excitones

Rights

openAccess

License

http://creativecommons.org/licenses/by/2.5/co/