Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field
ABSTRACT: The effects of intense laser radiation on the exciton states in GaAs-Ga1−xAlxAs quantum dots are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations...
- Autores:
-
Duque Echeverri, Carlos Alberto
Mora Ramos, Miguel Eduardo
Kasapoğlu, Esin
Sari, Huseyin
Sökmen, Ismail
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2012
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/30966
- Acceso en línea:
- https://hdl.handle.net/10495/30966
- Palabra clave:
- Puntos cuánticos
Quantum Dots
Campos eléctricos
Electric fields
Lasers
Excitones directos
Campo láser
- Rights
- openAccess
- License
- http://creativecommons.org/licenses/by/2.5/co/
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| dc.title.spa.fl_str_mv |
Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field |
| title |
Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field |
| spellingShingle |
Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field Puntos cuánticos Quantum Dots Campos eléctricos Electric fields Lasers Excitones directos Campo láser |
| title_short |
Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field |
| title_full |
Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field |
| title_fullStr |
Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field |
| title_full_unstemmed |
Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field |
| title_sort |
Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric field |
| dc.creator.fl_str_mv |
Duque Echeverri, Carlos Alberto Mora Ramos, Miguel Eduardo Kasapoğlu, Esin Sari, Huseyin Sökmen, Ismail |
| dc.contributor.author.none.fl_str_mv |
Duque Echeverri, Carlos Alberto Mora Ramos, Miguel Eduardo Kasapoğlu, Esin Sari, Huseyin Sökmen, Ismail |
| dc.contributor.researchgroup.spa.fl_str_mv |
Grupo de Materia Condensada-UdeA |
| dc.subject.decs.none.fl_str_mv |
Puntos cuánticos Quantum Dots |
| topic |
Puntos cuánticos Quantum Dots Campos eléctricos Electric fields Lasers Excitones directos Campo láser |
| dc.subject.lemb.none.fl_str_mv |
Campos eléctricos Electric fields Lasers |
| dc.subject.proposal.spa.fl_str_mv |
Excitones directos Campo láser |
| description |
ABSTRACT: The effects of intense laser radiation on the exciton states in GaAs-Ga1−xAlxAs quantum dots are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included along the lines of the Floquet method, modifying the confinement potential associated to the heterostructure. The laser field modifies the Coulomb potential via the generation of two interaction centers. The exciton binding energy behaves as a decreasing function of the laser field strength, as well as of the size of the quantum dot. The normalized photoluminescence peak energy increases with the laser field strength and behaves as a decreasing function of the dot’s dimensions for fixed laser field intensity. |
| publishDate |
2012 |
| dc.date.issued.none.fl_str_mv |
2012 |
| dc.date.accessioned.none.fl_str_mv |
2022-09-29T15:53:26Z |
| dc.date.available.none.fl_str_mv |
2022-09-29T15:53:26Z |
| dc.type.spa.fl_str_mv |
Artículo de investigación |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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https://purl.org/redcol/resource_type/ART |
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http://purl.org/coar/version/c_970fb48d4fbd8a85 |
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info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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Mora-Ramos, M. & Duque, C. & Kasapoglu, Esin & Sari, Hüseyin & Sökmen, İsmail. (2012). Study of direct and indirect exciton states in GaAs-Ga1−xAlxAs quantum dots under the effects of intense laser field and applied electric field. The European Physical Journal B. 85. 10.1140/epjb/e2012-30148-5. |
| dc.identifier.issn.none.fl_str_mv |
1434-6028 |
| dc.identifier.uri.none.fl_str_mv |
https://hdl.handle.net/10495/30966 |
| dc.identifier.doi.none.fl_str_mv |
10.1140/epjb/e2012-30148-5 |
| dc.identifier.eissn.none.fl_str_mv |
1434-6036 |
| identifier_str_mv |
Mora-Ramos, M. & Duque, C. & Kasapoglu, Esin & Sari, Hüseyin & Sökmen, İsmail. (2012). Study of direct and indirect exciton states in GaAs-Ga1−xAlxAs quantum dots under the effects of intense laser field and applied electric field. The European Physical Journal B. 85. 10.1140/epjb/e2012-30148-5. 1434-6028 10.1140/epjb/e2012-30148-5 1434-6036 |
| url |
https://hdl.handle.net/10495/30966 |
| dc.language.iso.spa.fl_str_mv |
eng |
| language |
eng |
| dc.relation.ispartofjournalabbrev.spa.fl_str_mv |
Eur. Phys. J. B. |
| dc.relation.citationendpage.spa.fl_str_mv |
321 |
| dc.relation.citationstartpage.spa.fl_str_mv |
312 |
| dc.relation.citationvolume.spa.fl_str_mv |
85 |
| dc.relation.ispartofjournal.spa.fl_str_mv |
European Physical Journal B |
| dc.rights.uri.*.fl_str_mv |
http://creativecommons.org/licenses/by/2.5/co/ |
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https://creativecommons.org/licenses/by/4.0/ |
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info:eu-repo/semantics/openAccess |
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openAccess |
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10 |
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application/pdf |
| dc.publisher.spa.fl_str_mv |
Springer |
| dc.publisher.place.spa.fl_str_mv |
Les Ulis, Francia |
| institution |
Universidad de Antioquia |
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Duque Echeverri, Carlos AlbertoMora Ramos, Miguel EduardoKasapoğlu, EsinSari, HuseyinSökmen, IsmailGrupo de Materia Condensada-UdeA2022-09-29T15:53:26Z2022-09-29T15:53:26Z2012Mora-Ramos, M. & Duque, C. & Kasapoglu, Esin & Sari, Hüseyin & Sökmen, İsmail. (2012). Study of direct and indirect exciton states in GaAs-Ga1−xAlxAs quantum dots under the effects of intense laser field and applied electric field. The European Physical Journal B. 85. 10.1140/epjb/e2012-30148-5.1434-6028https://hdl.handle.net/10495/3096610.1140/epjb/e2012-30148-51434-6036ABSTRACT: The effects of intense laser radiation on the exciton states in GaAs-Ga1−xAlxAs quantum dots are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included along the lines of the Floquet method, modifying the confinement potential associated to the heterostructure. The laser field modifies the Coulomb potential via the generation of two interaction centers. The exciton binding energy behaves as a decreasing function of the laser field strength, as well as of the size of the quantum dot. The normalized photoluminescence peak energy increases with the laser field strength and behaves as a decreasing function of the dot’s dimensions for fixed laser field intensity.COL003331910application/pdfengSpringerLes Ulis, Franciahttp://creativecommons.org/licenses/by/2.5/co/https://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Study of direct and indirect exciton states in GaAs-Ga1-xAlxAs quantum dots under the effects of intense laser field and applied electric fieldArtículo de investigaciónhttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARThttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionPuntos cuánticosQuantum DotsCampos eléctricosElectric fieldsLasersExcitones directosCampo láserEur. Phys. J. 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