Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field

ABSTRACT: Using the effective mass approximation in a parabolic two-band model, we studied the effects of the geometrical parameters, on the electron and hole states, in two truncated conical quantum dots: (i) GaAs-(Ga,Al)As in the presence of a shallow donor impurity and under an applied magnetic f...

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Autores:
Pulgar Velásquez, Lorenz
Gil Corrales, John Alexander
Duque Echeverri, Carlos Alberto
Morales Aramburo, Álvaro Luis
Sierra Ortega, José
Vinasco Suárez, Juan Alejandro
Laroze, David
Radu, Adrian
Kasapoglu, Esin
Restrepo Arango, Ricardo León
Tipo de recurso:
Article of investigation
Fecha de publicación:
2021
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/26172
Acceso en línea:
http://hdl.handle.net/10495/26172
Palabra clave:
Truncated conical quantum dots
Puntos cuánticos cónicos truncados
Exciton states
Estados de excitón
Donor-impurity states
Applied magnetic field
Type II quantum dots
Rights
openAccess
License
http://creativecommons.org/licenses/by/2.5/co/
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dc.title.spa.fl_str_mv Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
title Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
spellingShingle Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
Truncated conical quantum dots
Puntos cuánticos cónicos truncados
Exciton states
Estados de excitón
Donor-impurity states
Applied magnetic field
Type II quantum dots
title_short Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
title_full Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
title_fullStr Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
title_full_unstemmed Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
title_sort Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field
dc.creator.fl_str_mv Pulgar Velásquez, Lorenz
Gil Corrales, John Alexander
Duque Echeverri, Carlos Alberto
Morales Aramburo, Álvaro Luis
Sierra Ortega, José
Vinasco Suárez, Juan Alejandro
Laroze, David
Radu, Adrian
Kasapoglu, Esin
Restrepo Arango, Ricardo León
dc.contributor.author.none.fl_str_mv Pulgar Velásquez, Lorenz
Gil Corrales, John Alexander
Duque Echeverri, Carlos Alberto
Morales Aramburo, Álvaro Luis
Sierra Ortega, José
Vinasco Suárez, Juan Alejandro
Laroze, David
Radu, Adrian
Kasapoglu, Esin
Restrepo Arango, Ricardo León
dc.contributor.researchgroup.spa.fl_str_mv Grupo de Materia Condensada-UdeA
dc.subject.proposal.spa.fl_str_mv Truncated conical quantum dots
Puntos cuánticos cónicos truncados
Exciton states
Estados de excitón
Donor-impurity states
Applied magnetic field
Type II quantum dots
topic Truncated conical quantum dots
Puntos cuánticos cónicos truncados
Exciton states
Estados de excitón
Donor-impurity states
Applied magnetic field
Type II quantum dots
description ABSTRACT: Using the effective mass approximation in a parabolic two-band model, we studied the effects of the geometrical parameters, on the electron and hole states, in two truncated conical quantum dots: (i) GaAs-(Ga,Al)As in the presence of a shallow donor impurity and under an applied magnetic field and (ii) CdSe–CdTe core–shell type-II quantum dot. For the first system, the impurity position and the applied magnetic field direction were chosen to preserve the system’s azimuthal symmetry. The finite element method obtains the solution of the Schrödinger equations for electron or hole with or without impurity with an adaptive discretization of a triangular mesh. The interaction of the electron and hole states is calculated in a first-order perturbative approximation. This study shows that the magnetic field and donor impurities are relevant factors in the optoelectronic properties of conical quantum dots. Additionally, for the CdSe–CdTe quantum dot, where, again, the axial symmetry is preserved, a switch between direct and indirect exciton is possible to be controlled through geometry.
publishDate 2021
dc.date.issued.none.fl_str_mv 2021
dc.date.accessioned.none.fl_str_mv 2022-02-24T14:45:04Z
dc.date.available.none.fl_str_mv 2022-02-24T14:45:04Z
dc.type.spa.fl_str_mv Artículo de investigación
dc.type.coar.spa.fl_str_mv http://purl.org/coar/resource_type/c_2df8fbb1
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dc.identifier.citation.spa.fl_str_mv Pulgar-Velásquez, L.; Sierra-Ortega, J.; Vinasco, J.A.; Laroze, D.; Radu, A.; Kasapoglu, E.; Restrepo, R.L.; Gil-Corrales, J.A.; Morales, A.L.; Duque, C.A. Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field. Nanomaterials 2021, 11, 2832. https://doi.org/10.3390/ nano11112832
dc.identifier.uri.none.fl_str_mv http://hdl.handle.net/10495/26172
dc.identifier.doi.none.fl_str_mv 10.3390/nano11112832
dc.identifier.eissn.none.fl_str_mv 2079-4991
identifier_str_mv Pulgar-Velásquez, L.; Sierra-Ortega, J.; Vinasco, J.A.; Laroze, D.; Radu, A.; Kasapoglu, E.; Restrepo, R.L.; Gil-Corrales, J.A.; Morales, A.L.; Duque, C.A. Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field. Nanomaterials 2021, 11, 2832. https://doi.org/10.3390/ nano11112832
10.3390/nano11112832
2079-4991
url http://hdl.handle.net/10495/26172
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.ispartofjournalabbrev.spa.fl_str_mv Nanomaterials
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dc.relation.citationstartpage.spa.fl_str_mv 1
dc.relation.citationvolume.spa.fl_str_mv 11
dc.relation.ispartofjournal.spa.fl_str_mv Nanomaterials
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dc.publisher.place.spa.fl_str_mv Basilea, Suiza
institution Universidad de Antioquia
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spelling Pulgar Velásquez, LorenzGil Corrales, John AlexanderDuque Echeverri, Carlos AlbertoMorales Aramburo, Álvaro LuisSierra Ortega, JoséVinasco Suárez, Juan AlejandroLaroze, DavidRadu, AdrianKasapoglu, EsinRestrepo Arango, Ricardo LeónGrupo de Materia Condensada-UdeA2022-02-24T14:45:04Z2022-02-24T14:45:04Z2021Pulgar-Velásquez, L.; Sierra-Ortega, J.; Vinasco, J.A.; Laroze, D.; Radu, A.; Kasapoglu, E.; Restrepo, R.L.; Gil-Corrales, J.A.; Morales, A.L.; Duque, C.A. Shallow Donor Impurity States with Excitonic Contribution in GaAs/AlGaAs and CdTe/CdSe Truncated Conical Quantum Dots under Applied Magnetic Field. Nanomaterials 2021, 11, 2832. https://doi.org/10.3390/ nano11112832http://hdl.handle.net/10495/2617210.3390/nano111128322079-4991ABSTRACT: Using the effective mass approximation in a parabolic two-band model, we studied the effects of the geometrical parameters, on the electron and hole states, in two truncated conical quantum dots: (i) GaAs-(Ga,Al)As in the presence of a shallow donor impurity and under an applied magnetic field and (ii) CdSe–CdTe core–shell type-II quantum dot. For the first system, the impurity position and the applied magnetic field direction were chosen to preserve the system’s azimuthal symmetry. The finite element method obtains the solution of the Schrödinger equations for electron or hole with or without impurity with an adaptive discretization of a triangular mesh. The interaction of the electron and hole states is calculated in a first-order perturbative approximation. This study shows that the magnetic field and donor impurities are relevant factors in the optoelectronic properties of conical quantum dots. 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