Interfacial host–guest complexation for inverted perovskite solar cells
Perovskite solar cells have demonstrated exceptional development over the past decade, but their stability remains a challenge toward the application of this technology. Several strategies have been used to address this, and the use of host–guest complexation has recently attracted more interest. Ho...
- Autores:
-
Ballestas Romero, Kevin Manuel
Milic, Jovana V.
Ramírez Zora, Daniel Estiben
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2024
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/46200
- Acceso en línea:
- https://hdl.handle.net/10495/46200
- Palabra clave:
- Photovoltaic power systems
Materials science
Supramolecular chemistry
Células solares
Solar cells
http://id.loc.gov/authorities/subjects/sh93000144
http://id.loc.gov/authorities/subjects/sh85082094
http://id.loc.gov/authorities/subjects/sh00000385
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- Rights
- openAccess
- License
- http://creativecommons.org/licenses/by-nc-nd/4.0/
| Summary: | Perovskite solar cells have demonstrated exceptional development over the past decade, but their stability remains a challenge toward the application of this technology. Several strategies have been used to address this, and the use of host–guest complexation has recently attracted more interest. However, this approach has primarily been exploited in conventional perovskite solar cells based on n-i-p architectures, while its use in inverted p-i-n devices remains unexplored. Herein, we employ representative crown ether, dibenzo-24-crown-8, for interfacial host–guest complexation in inverted perovskite solar cells based on methylammonium and methylammonium-free formamidinium-cesium halide perovskite compositions. Upon post-treatment of the perovskite films, we observed nanostructures on the surface that were associated with the reduced amount of trap states at the interface with the electron transport layer. As a result, we demonstrate improved efficiencies and operational stabilities following ISOS-D-2I and ISOS-L-2I protocols, demonstrating the viability of this approach to advance device stability. |
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