Potencial de morse como perfil de pozos cuánticos semiconductores
ABSTRACT: Theoretical calculations of the energy and wave function of the ground state and the first excited state of an electron confined in a GaAsAl/GaAs quantum well with Morse-like potential profile are presented using the effective mass approximation method and the envelope wave function. The i...
- Autores:
-
Martínez Rendón, Valentina
Castaño Uribe, Carolina
Giraldo Martínez, Andrea
González Pereira, Juan Pablo
Restrepo Arango, Ricardo León
Morales Aramburo, Álvaro Luis
Duque Echeverri, Carlos Alberto
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2016
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- spa
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/13070
- Acceso en línea:
- http://hdl.handle.net/10495/13070
- Palabra clave:
- Pozos cuánticos
Quantum wells
Semiconductores
Semiconductors
Potencial de Morse
- Rights
- openAccess
- License
- https://creativecommons.org/licenses/by-nc-nd/4.0/
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| dc.title.spa.fl_str_mv |
Potencial de morse como perfil de pozos cuánticos semiconductores |
| dc.title.translated.spa.fl_str_mv |
Morse Potential as semiconductor quantum wells profile |
| title |
Potencial de morse como perfil de pozos cuánticos semiconductores |
| spellingShingle |
Potencial de morse como perfil de pozos cuánticos semiconductores Pozos cuánticos Quantum wells Semiconductores Semiconductors Potencial de Morse |
| title_short |
Potencial de morse como perfil de pozos cuánticos semiconductores |
| title_full |
Potencial de morse como perfil de pozos cuánticos semiconductores |
| title_fullStr |
Potencial de morse como perfil de pozos cuánticos semiconductores |
| title_full_unstemmed |
Potencial de morse como perfil de pozos cuánticos semiconductores |
| title_sort |
Potencial de morse como perfil de pozos cuánticos semiconductores |
| dc.creator.fl_str_mv |
Martínez Rendón, Valentina Castaño Uribe, Carolina Giraldo Martínez, Andrea González Pereira, Juan Pablo Restrepo Arango, Ricardo León Morales Aramburo, Álvaro Luis Duque Echeverri, Carlos Alberto |
| dc.contributor.author.none.fl_str_mv |
Martínez Rendón, Valentina Castaño Uribe, Carolina Giraldo Martínez, Andrea González Pereira, Juan Pablo Restrepo Arango, Ricardo León Morales Aramburo, Álvaro Luis Duque Echeverri, Carlos Alberto |
| dc.contributor.researchgroup.spa.fl_str_mv |
Grupo de Materia Condensada-UdeA |
| dc.subject.lemb.none.fl_str_mv |
Pozos cuánticos Quantum wells Semiconductores Semiconductors |
| topic |
Pozos cuánticos Quantum wells Semiconductores Semiconductors Potencial de Morse |
| dc.subject.proposal.spa.fl_str_mv |
Potencial de Morse |
| description |
ABSTRACT: Theoretical calculations of the energy and wave function of the ground state and the first excited state of an electron confined in a GaAsAl/GaAs quantum well with Morse-like potential profile are presented using the effective mass approximation method and the envelope wave function. The inter-sub-band transitions according to the parameters defining the geometry of the Morse potential, to represent the inter-diffusion between materials of the barrier and the well, are analyzed. Additionally, are shown the peaks of the nonlinear optical rectification as a function of energy of incident photons and its resonance with the transition energy between the two states. An electric field is applied in the growth direction of the quantum well and a magnetic field perpendicular to the heterostructure in order to study the shifts of the optical response peaks in the spectrum of the incident photons. |
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2016 |
| dc.date.issued.none.fl_str_mv |
2016 |
| dc.date.accessioned.none.fl_str_mv |
2020-01-11T21:59:49Z |
| dc.date.available.none.fl_str_mv |
2020-01-11T21:59:49Z |
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Artículo de investigación |
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http://purl.org/coar/version/c_71e4c1898caa6e32 |
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info:eu-repo/semantics/article |
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Martínez Rendón, V., Castaño Uribe, C., Giraldo Martínez, A., González Pereira, J. P., Restrepo Arango, R. L., Morales Aramburo, A. L., & Duque Echeverri, C. A. (2016). Potencial de morse como perfil de pozos cuánticos semiconductores. Revista EIA, 12(3), 85-94. http:/dx.doi.org/10.14508/reia.2016.12.e3.85-94 |
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1794-1237 |
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http://hdl.handle.net/10495/13070 |
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10.14508/reia.2016.12.e3.85-94 |
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2463-0950 |
| identifier_str_mv |
Martínez Rendón, V., Castaño Uribe, C., Giraldo Martínez, A., González Pereira, J. P., Restrepo Arango, R. L., Morales Aramburo, A. L., & Duque Echeverri, C. A. (2016). Potencial de morse como perfil de pozos cuánticos semiconductores. Revista EIA, 12(3), 85-94. http:/dx.doi.org/10.14508/reia.2016.12.e3.85-94 1794-1237 10.14508/reia.2016.12.e3.85-94 2463-0950 |
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http://hdl.handle.net/10495/13070 |
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spa |
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12 |
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Revista EIA |
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Universidad EIA |
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Medellín, Colombia |
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Martínez Rendón, ValentinaCastaño Uribe, CarolinaGiraldo Martínez, AndreaGonzález Pereira, Juan PabloRestrepo Arango, Ricardo LeónMorales Aramburo, Álvaro LuisDuque Echeverri, Carlos AlbertoGrupo de Materia Condensada-UdeA2020-01-11T21:59:49Z2020-01-11T21:59:49Z2016Martínez Rendón, V., Castaño Uribe, C., Giraldo Martínez, A., González Pereira, J. P., Restrepo Arango, R. L., Morales Aramburo, A. L., & Duque Echeverri, C. A. (2016). Potencial de morse como perfil de pozos cuánticos semiconductores. Revista EIA, 12(3), 85-94. http:/dx.doi.org/10.14508/reia.2016.12.e3.85-941794-1237http://hdl.handle.net/10495/1307010.14508/reia.2016.12.e3.85-942463-0950ABSTRACT: Theoretical calculations of the energy and wave function of the ground state and the first excited state of an electron confined in a GaAsAl/GaAs quantum well with Morse-like potential profile are presented using the effective mass approximation method and the envelope wave function. The inter-sub-band transitions according to the parameters defining the geometry of the Morse potential, to represent the inter-diffusion between materials of the barrier and the well, are analyzed. Additionally, are shown the peaks of the nonlinear optical rectification as a function of energy of incident photons and its resonance with the transition energy between the two states. An electric field is applied in the growth direction of the quantum well and a magnetic field perpendicular to the heterostructure in order to study the shifts of the optical response peaks in the spectrum of the incident photons.RESUMEN: Se presentan los cálculos teóricos de la energía y la función de onda del estado base y primer estado excitado de un electrón confinado en un pozo cuántico de GaAsAl/GaAs con perfil de potencial tipo Morse usando la aproximación de masa efectiva y el método de función de onda envolvente. Se analizan las transiciones inter-sub-banda de acuerdo a los parámetros que definen la geometría del potencial de Morse para representar la inter-difusión entre los materiales de la barrera y del pozo. Adicionalmente, se presentan los picos de la rectificación óptica no lineal en función de la energía de los fotones incidentes y su resonancia con la energía de transición entre los dos estados. Se aplica un campo eléctrico en la dirección de crecimiento del pozo cuántico y un campo magnético perpendicular a la heteroestructura con el fin estudiar los corrimientos de los picos de la respuesta óptica en el espectro de los fotones incidentes.COL0033319application/pdfspaUniversidad EIAMedellín, Colombiahttps://creativecommons.org/licenses/by-nc-nd/4.0/http://creativecommons.org/licenses/by-nc-nd/2.5/co/Atribución-NoComercial-SinDerivadas 2.5 Colombiainfo:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Potencial de morse como perfil de pozos cuánticos semiconductoresMorse Potential as semiconductor quantum wells profileArtículo de investigaciónhttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARThttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/version/c_71e4c1898caa6e32info:eu-repo/semantics/articlePozos cuánticosQuantum wellsSemiconductoresSemiconductorsPotencial de Morse9438512Revista EIAPublicationCC-LICENSElicense_urllicense_urlArtículo de investigacióntext/plain; 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