A variational method for the description of the pressure-induced image mixing in GaAs-based quantum wells

ABSTARCT: The mixing between Γ and X conduction band valleys in GaAs–Ga1-xAlxAs quantum wells is investigated along the lines of a variational model. Trial wavefunctions are depending on a weighting variational parameter that accounts for the mixing by acting as a coefficient in the combination of both uncorrelated Γ and X states in the system. The dependencies of the calculated binding energy of a donor impurity and the correlated electron–hole photoluminescence peak energy upon hydrostatic pressure and quantum well width are presented.

• Autores: Mora Ramos, Miguel Eduardo; López Ríos, Sonia Yaneth; Duque Echeverri, Carlos Alberto
• Tipo de recurso: Article of investigation
• Fecha de publicación: 2008
• Institución: Universidad de Antioquia
• Repositorio: Repositorio UdeA
• Idioma: eng
• OAI Identifier: oai:bibliotecadigital.udea.edu.co:10495/4838
• Acceso en línea: http://hdl.handle.net/10495/4838
• Palabra clave: Wells; Pozos; Expansion of liquids; Coeficiente de dilatación; Hidrostátic; Hidrostática; Hydrostatic pressure; Presión hirostática; Quantum wells; Pozos cuánticos; http://vocabularies.unesco.org/thesaurus/concept11642
• Rights: openAccess
• License: https://creativecommons.org/licenses/by-nc-nd/4.0/