Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field

ABSTRACT: We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates a...

Full description

Autores:
Yesilgul, Unal
Ungan, Fatih
Duque Echeverri, Carlos Alberto
Kasapoglu, Esin
Sari, H.
Sokmen, Ismail
Tipo de recurso:
Article of investigation
Fecha de publicación:
2012
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/13127
Acceso en línea:
http://hdl.handle.net/10495/13127
Palabra clave:
Intense laser fields
Laser-dressed potential
Superlattices
Intensidad del campo del láser
Rights
openAccess
License
https://creativecommons.org/licenses/by-nc-nd/4.0/
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network_name_str Repositorio UdeA
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dc.title.spa.fl_str_mv Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field
title Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field
spellingShingle Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field
Intense laser fields
Laser-dressed potential
Superlattices
Intensidad del campo del láser
title_short Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field
title_full Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field
title_fullStr Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field
title_full_unstemmed Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field
title_sort Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field
dc.creator.fl_str_mv Yesilgul, Unal
Ungan, Fatih
Duque Echeverri, Carlos Alberto
Kasapoglu, Esin
Sari, H.
Sokmen, Ismail
dc.contributor.author.none.fl_str_mv Yesilgul, Unal
Ungan, Fatih
Duque Echeverri, Carlos Alberto
Kasapoglu, Esin
Sari, H.
Sokmen, Ismail
dc.contributor.researchgroup.spa.fl_str_mv Grupo de Materia Condensada-UdeA
dc.subject.none.fl_str_mv Intense laser fields
Laser-dressed potential
Superlattices
Intensidad del campo del láser
topic Intense laser fields
Laser-dressed potential
Superlattices
Intensidad del campo del láser
description ABSTRACT: We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates an additional geometric confinement on the electronic states. Numerical results show that when tuning the strength of the laser field significant changes come in the electronic energy levels and density of states.
publishDate 2012
dc.date.issued.none.fl_str_mv 2012
dc.date.accessioned.none.fl_str_mv 2020-01-14T03:42:21Z
dc.date.available.none.fl_str_mv 2020-01-14T03:42:21Z
dc.type.spa.fl_str_mv Artículo de investigación
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dc.identifier.citation.spa.fl_str_mv S. Sakiroglu, U. Yesilgul, F. Ungan, C.A. Duque-Echeverri, E. Kasapoglu, H. Sari, and I. Sokmen, “Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field,” Elsevier, vol. 132, no. 6, pp. 1584-1588, 2012. http://doi.org/10.1016/j.jlumin.2012.01.060
dc.identifier.issn.none.fl_str_mv 0022-2313
dc.identifier.uri.none.fl_str_mv http://hdl.handle.net/10495/13127
dc.identifier.doi.none.fl_str_mv 10.1016/j.jlumin.2012.01.060
dc.identifier.eissn.none.fl_str_mv 1872-7883
identifier_str_mv S. Sakiroglu, U. Yesilgul, F. Ungan, C.A. Duque-Echeverri, E. Kasapoglu, H. Sari, and I. Sokmen, “Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field,” Elsevier, vol. 132, no. 6, pp. 1584-1588, 2012. http://doi.org/10.1016/j.jlumin.2012.01.060
0022-2313
10.1016/j.jlumin.2012.01.060
1872-7883
url http://hdl.handle.net/10495/13127
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.ispartofjournalabbrev.spa.fl_str_mv J. Lumin.
dc.relation.citationendpage.spa.fl_str_mv 1588
dc.relation.citationissue.spa.fl_str_mv 6
dc.relation.citationstartpage.spa.fl_str_mv 1584
dc.relation.citationvolume.spa.fl_str_mv 132
dc.relation.ispartofjournal.spa.fl_str_mv Journal of Luminescence
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dc.publisher.place.spa.fl_str_mv Ámsterdam, Países Bajos
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spelling Yesilgul, UnalUngan, FatihDuque Echeverri, Carlos AlbertoKasapoglu, EsinSari, H.Sokmen, IsmailGrupo de Materia Condensada-UdeA2020-01-14T03:42:21Z2020-01-14T03:42:21Z2012S. Sakiroglu, U. Yesilgul, F. Ungan, C.A. Duque-Echeverri, E. Kasapoglu, H. Sari, and I. Sokmen, “Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field,” Elsevier, vol. 132, no. 6, pp. 1584-1588, 2012. http://doi.org/10.1016/j.jlumin.2012.01.0600022-2313http://hdl.handle.net/10495/1312710.1016/j.jlumin.2012.01.0601872-7883ABSTRACT: We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates an additional geometric confinement on the electronic states. 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