Infinite Potential Barrier and Hydrostatic Pressure Effects on Impurity-Related Optical Absorption Spectra in GaAs Double Quantum Wells

ABSTRACT: Using the effective-mass approximation and the variational method, we have calculated the effects of hydrostatic pressure on the donor- and acceptor-related optical absorption spectra in symmetrical GaAs double quantum well structures. A central finite potential barrier and two infinite external barriers constitute the profile of the potential barrier considered for the wells. Our results are presented as a function of the well and barrier widths and hydrostatic pressure. For the pressure dependence we consider the Γ−X mixing in the central barrier layer. For symmetrical and infinite-external-barrier quantum wells, and depending on the sizes of the structure and the hydrostatic pressure, the donor-related spectra show three special structures, whereas for the acceptor one only two structures appear.

• Autores: Raigoza Bohorquez, Nicolás; Morales Aramburo, Álvaro Luis; Duque Echeverri, Carlos Alberto
• Tipo de recurso: Article of investigation
• Fecha de publicación: 2006
• Institución: Universidad de Antioquia
• Repositorio: Repositorio UdeA
• Idioma: eng
• OAI Identifier: oai:bibliotecadigital.udea.edu.co:10495/30804
• Acceso en línea: https://hdl.handle.net/10495/30804
• Palabra clave: Láseres de Semiconductores; Lasers, Semiconductor; Presión Hidrostática; Hydrostatic pressure; Pozos cuánticos; Quantum wells; GaAs
• Rights: openAccess
• License: http://creativecommons.org/licenses/by-nc/2.5/co/