Impurity binding energy for delta-doped quantum well structures
ABSTRACT: The binding energy of an impurity delta layer situated either in the centre or at the edge of a quantum well (QW) is theoretically considered for the example of n-type Si0⋅8Ge0⋅2/Si/Si0⋅8Ge0⋅2 QW doped with phosphorus. Calculations are made for the case of not so big impurity concentration...
- Autores:
-
Duque Echeverri, Carlos Alberto
Tulupenko, Viktor
Demediuk, R.
Fomina, O.
Akimov, Volodymyr
Belykh, V.
Dmitrichenko, T.
Poroshin, V.
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2014
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/8373
- Acceso en línea:
- http://hdl.handle.net/10495/8373
- Palabra clave:
- Estructuras hidraúlicas
Hydraulic structures
Pozos cuánticos
Quantum wells
Estructuras de pozos
Energía de enlace de impurezas
- Rights
- openAccess
- License
- http://creativecommons.org/licenses/by-nc-nd/2.5/co/
| Summary: | ABSTRACT: The binding energy of an impurity delta layer situated either in the centre or at the edge of a quantum well (QW) is theoretically considered for the example of n-type Si0⋅8Ge0⋅2/Si/Si0⋅8Ge0⋅2 QW doped with phosphorus. Calculations are made for the case of not so big impurity concentrations, when impurity bands are not yet formed and it is still possible to treat impurity as isolated ones. It is shown on the base of self-consistent solution of Schrödinger, Poisson and electro-neutrality equations that impurity binding energy is dependent on the degree of impurity ionization and the most noticeably for the case of edge-doped QWs. |
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