Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum well
ABSTRACT: The effects of intense laser radiation on the exciton states in GaAs-Ga1–xAlxAs quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximation...
- Autores:
-
Mora Ramos, Miguel Eduardo
Kasapoglu, E.
Sokmen, I.
Sari, H.
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2012
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/13203
- Acceso en línea:
- http://hdl.handle.net/10495/13203
- Palabra clave:
- Electric fields
Excitons
Intense laser fields
Quantum wells
- Rights
- openAccess
- License
- https://creativecommons.org/licenses/by/2.5/co/
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Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum well |
| title |
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum well |
| spellingShingle |
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum well Electric fields Excitons Intense laser fields Quantum wells |
| title_short |
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum well |
| title_full |
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum well |
| title_fullStr |
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum well |
| title_full_unstemmed |
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum well |
| title_sort |
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum well |
| dc.creator.fl_str_mv |
Mora Ramos, Miguel Eduardo Kasapoglu, E. Sokmen, I. Sari, H. |
| dc.contributor.author.none.fl_str_mv |
Mora Ramos, Miguel Eduardo Kasapoglu, E. Sokmen, I. Sari, H. |
| dc.subject.none.fl_str_mv |
Electric fields Excitons Intense laser fields Quantum wells |
| topic |
Electric fields Excitons Intense laser fields Quantum wells |
| description |
ABSTRACT: The effects of intense laser radiation on the exciton states in GaAs-Ga1–xAlxAs quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included along the lines of the Floquet method, modifying the confinement potential associated to the heterostructure. The results for the exciton binding energy, the energy of the exciton-related photoluminescence peak, and the carriers overlap integral are presented for several configurations of the quantum well size, the strength of the applied electric fields, and the incident laser radiation. |
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2012 |
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2012 |
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2020-01-14T22:07:34Z |
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2020-01-14T22:07:34Z |
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Artículo de investigación |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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C.A. Duque-Echeverri, M.E. Mora-Ramos, E. Kasapoglu, I. Sokmen, and H. Sari, “Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well,” Phys. Status Solidi B., vol. 249, no. 1, pp. 118-127, 2012. http://dx.doi.org/10.1002/pssb.201147250 |
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0370-1972 |
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http://hdl.handle.net/10495/13203 |
| dc.identifier.doi.none.fl_str_mv |
10.1002/pssb.201147250 |
| dc.identifier.eissn.none.fl_str_mv |
1521-3951 |
| identifier_str_mv |
C.A. Duque-Echeverri, M.E. Mora-Ramos, E. Kasapoglu, I. Sokmen, and H. Sari, “Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well,” Phys. Status Solidi B., vol. 249, no. 1, pp. 118-127, 2012. http://dx.doi.org/10.1002/pssb.201147250 0370-1972 10.1002/pssb.201147250 1521-3951 |
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http://hdl.handle.net/10495/13203 |
| dc.language.iso.spa.fl_str_mv |
eng |
| language |
eng |
| dc.relation.ispartofjournalabbrev.spa.fl_str_mv |
Phys. stat. sol. |
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127 |
| dc.relation.citationissue.spa.fl_str_mv |
1 |
| dc.relation.citationstartpage.spa.fl_str_mv |
118 |
| dc.relation.citationvolume.spa.fl_str_mv |
249 |
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Physica Status Solidi B. |
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https://creativecommons.org/licenses/by/2.5/co/ |
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https://creativecommons.org/licenses/by/4.0/ |
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Atribución 2.5 Colombia (CC BY 2.5 CO) |
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info:eu-repo/semantics/openAccess |
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| dc.publisher.spa.fl_str_mv |
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Reino Unido |
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Mora Ramos, Miguel EduardoKasapoglu, E.Sokmen, I.Sari, H.2020-01-14T22:07:34Z2020-01-14T22:07:34Z2012C.A. Duque-Echeverri, M.E. Mora-Ramos, E. Kasapoglu, I. Sokmen, and H. Sari, “Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well,” Phys. Status Solidi B., vol. 249, no. 1, pp. 118-127, 2012. http://dx.doi.org/10.1002/pssb.2011472500370-1972http://hdl.handle.net/10495/1320310.1002/pssb.2011472501521-3951ABSTRACT: The effects of intense laser radiation on the exciton states in GaAs-Ga1–xAlxAs quantum wells are studied with the inclusion of applied dc electric fields oriented along the growth direction of the system. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included along the lines of the Floquet method, modifying the confinement potential associated to the heterostructure. The results for the exciton binding energy, the energy of the exciton-related photoluminescence peak, and the carriers overlap integral are presented for several configurations of the quantum well size, the strength of the applied electric fields, and the incident laser radiation.9application/pdfengWiley VchReino Unidohttps://creativecommons.org/licenses/by/2.5/co/https://creativecommons.org/licenses/by/4.0/Atribución 2.5 Colombia (CC BY 2.5 CO)info:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Electric fieldsExcitonsIntense laser fieldsQuantum wellsCombined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells : Transition from the single to double quantum wellArtículo de investigaciónhttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARThttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionPhys. stat. sol.1271118249Physica Status Solidi B.PublicationORIGINALDuqueCarlos_2012_Combinedeffectsintense.pdfDuqueCarlos_2012_Combinedeffectsintense.pdfArtículo de investigaciónapplication/pdf916131https://bibliotecadigital.udea.edu.co/bitstreams/d4cac351-9cbc-447e-b463-8e3f053270a3/download622675cd5ab72d67c8d20bb54aa36cd8MD51trueAnonymousREADCC-LICENSElicense_urllicense_urltext/plain; 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