Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications
ABSTRACT: In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variatio...
- Autores:
-
Gil Corrales, John Alexander
Morales Aramburo, Álvaro Luis
Yücel, Melike Behiye
Kasapoglu, Esin
Duque Echeverri, Carlos Alberto
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2022
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/29752
- Acceso en línea:
- https://hdl.handle.net/10495/29752
- Palabra clave:
- Electrónica - aparatos e instrumentos
Electronic apparatus and appliances
GaAs/AlGaAs–InSe/InP superlattice
Probabilidad de transmisión
Landauer, Rolf
Campo láser intenso
- Rights
- openAccess
- License
- http://creativecommons.org/licenses/by/2.5/co/
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Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications |
| title |
Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications |
| spellingShingle |
Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications Electrónica - aparatos e instrumentos Electronic apparatus and appliances GaAs/AlGaAs–InSe/InP superlattice Probabilidad de transmisión Landauer, Rolf Campo láser intenso |
| title_short |
Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications |
| title_full |
Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications |
| title_fullStr |
Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications |
| title_full_unstemmed |
Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications |
| title_sort |
Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications |
| dc.creator.fl_str_mv |
Gil Corrales, John Alexander Morales Aramburo, Álvaro Luis Yücel, Melike Behiye Kasapoglu, Esin Duque Echeverri, Carlos Alberto |
| dc.contributor.author.none.fl_str_mv |
Gil Corrales, John Alexander Morales Aramburo, Álvaro Luis Yücel, Melike Behiye Kasapoglu, Esin Duque Echeverri, Carlos Alberto |
| dc.contributor.researchgroup.spa.fl_str_mv |
Grupo de Materia Condensada-UdeA |
| dc.subject.lemb.none.fl_str_mv |
Electrónica - aparatos e instrumentos Electronic apparatus and appliances |
| topic |
Electrónica - aparatos e instrumentos Electronic apparatus and appliances GaAs/AlGaAs–InSe/InP superlattice Probabilidad de transmisión Landauer, Rolf Campo láser intenso |
| dc.subject.proposal.spa.fl_str_mv |
GaAs/AlGaAs–InSe/InP superlattice Probabilidad de transmisión Landauer, Rolf Campo láser intenso |
| description |
ABSTRACT: In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variations in the number of periods of the superlattice and its shape by means of geometric parameters. The effect of a non-resonant intense laser field has been included in the system to analyze the changes in the electronic transport properties by means of the Landauer formalism. It is found that the highest tunneling current is given for the GaAs-based compared to the InSe-based system and that the intense laser field improves the current–voltage characteristics generating higher current peaks, maintaining a negative differential resistance (NDR) effect, both with and without laser field for both materials and this fact allows to tune the magnitude of the current peak with the external field and therefore extend the range of operation for multiple applications. Finally, the power of the system is discussed for different bias voltages as a function of the chemical potential. |
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2022 |
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2022-07-15T18:02:11Z |
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2022-07-15T18:02:11Z |
| dc.date.issued.none.fl_str_mv |
2022 |
| dc.type.spa.fl_str_mv |
Artículo de investigación |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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https://purl.org/redcol/resource_type/ART |
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http://purl.org/coar/version/c_970fb48d4fbd8a85 |
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publishedVersion |
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Gil-Corrales JA, Morales AL, Behiye Yücel M, Kasapoglu E, Duque CA. Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications. International Journal of Molecular Sciences [Internet]. 2022 May 5;23(9):5169. Available from: http://dx.doi.org/10.3390/ijms23095169 |
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1661-6596 |
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https://hdl.handle.net/10495/29752 |
| dc.identifier.doi.none.fl_str_mv |
10.3390/ijms23095169 |
| dc.identifier.eissn.none.fl_str_mv |
1422-0067 |
| identifier_str_mv |
Gil-Corrales JA, Morales AL, Behiye Yücel M, Kasapoglu E, Duque CA. Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications. International Journal of Molecular Sciences [Internet]. 2022 May 5;23(9):5169. Available from: http://dx.doi.org/10.3390/ijms23095169 1661-6596 10.3390/ijms23095169 1422-0067 |
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https://hdl.handle.net/10495/29752 |
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eng |
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eng |
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Int. J. Mol. Sci. |
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18 |
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9 |
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1 |
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23 |
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International Journal of Molecular Sciences |
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http://creativecommons.org/licenses/by/2.5/co/ |
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https://creativecommons.org/licenses/by/4.0/ |
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Atribución 2.5 Colombia |
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info:eu-repo/semantics/openAccess |
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http://purl.org/coar/access_right/c_abf2 |
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openAccess |
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Gil Corrales, John AlexanderMorales Aramburo, Álvaro LuisYücel, Melike BehiyeKasapoglu, EsinDuque Echeverri, Carlos AlbertoGrupo de Materia Condensada-UdeA2022-07-15T18:02:11Z2022-07-15T18:02:11Z2022Gil-Corrales JA, Morales AL, Behiye Yücel M, Kasapoglu E, Duque CA. Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications. International Journal of Molecular Sciences [Internet]. 2022 May 5;23(9):5169. Available from: http://dx.doi.org/10.3390/ijms230951691661-6596https://hdl.handle.net/10495/2975210.3390/ijms230951691422-0067ABSTRACT: In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variations in the number of periods of the superlattice and its shape by means of geometric parameters. The effect of a non-resonant intense laser field has been included in the system to analyze the changes in the electronic transport properties by means of the Landauer formalism. It is found that the highest tunneling current is given for the GaAs-based compared to the InSe-based system and that the intense laser field improves the current–voltage characteristics generating higher current peaks, maintaining a negative differential resistance (NDR) effect, both with and without laser field for both materials and this fact allows to tune the magnitude of the current peak with the external field and therefore extend the range of operation for multiple applications. Finally, the power of the system is discussed for different bias voltages as a function of the chemical potential.COL003331918application/pdfengDMPIBasilea, Suizahttp://creativecommons.org/licenses/by/2.5/co/https://creativecommons.org/licenses/by/4.0/Atribución 2.5 Colombiainfo:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric ModificationsArtículo de investigaciónhttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARThttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionElectrónica - aparatos e instrumentosElectronic apparatus and appliancesGaAs/AlGaAs–InSe/InP superlatticeProbabilidad de transmisiónLandauer, RolfCampo láser intensoInt. J. Mol. 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