Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fields

ABSTRACT: The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1−xAlxAs quantum wells. The combined effects on th...

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Autores:
Duque Echeverri, Carlos Alberto
Oliveira, Luiz Eduardo
Leyva, Melquiades de Dios
Tipo de recurso:
Article of investigation
Fecha de publicación:
2006
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/30802
Acceso en línea:
https://hdl.handle.net/10495/30802
Palabra clave:
Campos Magnéticos
Magnetic fields
Pozos cuánticos
Quantum wells
Campos eléctricos
Electric fields
Transiciones de excitones
Rights
openAccess
License
http://creativecommons.org/licenses/by-nc/2.5/co/
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network_name_str Repositorio UdeA
repository_id_str
dc.title.spa.fl_str_mv Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fields
title Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fields
spellingShingle Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fields
Campos Magnéticos
Magnetic fields
Pozos cuánticos
Quantum wells
Campos eléctricos
Electric fields
Transiciones de excitones
title_short Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fields
title_full Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fields
title_fullStr Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fields
title_full_unstemmed Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fields
title_sort Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fields
dc.creator.fl_str_mv Duque Echeverri, Carlos Alberto
Oliveira, Luiz Eduardo
Leyva, Melquiades de Dios
dc.contributor.author.none.fl_str_mv Duque Echeverri, Carlos Alberto
Oliveira, Luiz Eduardo
Leyva, Melquiades de Dios
dc.contributor.researchgroup.spa.fl_str_mv Grupo de Materia Condensada-UdeA
dc.subject.lemb.none.fl_str_mv Campos Magnéticos
Magnetic fields
Pozos cuánticos
Quantum wells
Campos eléctricos
Electric fields
topic Campos Magnéticos
Magnetic fields
Pozos cuánticos
Quantum wells
Campos eléctricos
Electric fields
Transiciones de excitones
dc.subject.proposal.spa.fl_str_mv Transiciones de excitones
description ABSTRACT: The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1−xAlxAs quantum wells. The combined effects on the heterostructure properties of the applied crossed electric/magnetic fields together with the direct coupling between the exciton center of mass and internal exciton motions may be dealt with via a simple parameter representing the distance between the electron and hole magnetic parabolas. Calculations lead to the expected behavior for the exciton dispersion in a wide range of the crossed electric/magnetic fields, and present theoretical results are found in good agreement with available experimental measurements.
publishDate 2006
dc.date.issued.none.fl_str_mv 2006
dc.date.accessioned.none.fl_str_mv 2022-09-23T21:45:01Z
dc.date.available.none.fl_str_mv 2022-09-23T21:45:01Z
dc.type.spa.fl_str_mv Artículo de investigación
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dc.identifier.citation.spa.fl_str_mv Duque, CA, Oliveira, LE, & Dios-Leyva, M. de. (2006). Transiciones de huecos de electrones correlacionadas en pozos cuánticos de GaAs y GaAs-(Ga,Al)As a granel: efectos de los campos magnéticos eléctricos y en el plano aplicados. Revista Brasileña de Física , 36 (3b), 1038-1041. https://doi.org/10.1590/S0103-97332006000600064
dc.identifier.issn.none.fl_str_mv 0103-9733
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/10495/30802
dc.identifier.doi.none.fl_str_mv 10.1590/S0103-97332006000600064
dc.identifier.eissn.none.fl_str_mv 1678-4448
identifier_str_mv Duque, CA, Oliveira, LE, & Dios-Leyva, M. de. (2006). Transiciones de huecos de electrones correlacionadas en pozos cuánticos de GaAs y GaAs-(Ga,Al)As a granel: efectos de los campos magnéticos eléctricos y en el plano aplicados. Revista Brasileña de Física , 36 (3b), 1038-1041. https://doi.org/10.1590/S0103-97332006000600064
0103-9733
10.1590/S0103-97332006000600064
1678-4448
url https://hdl.handle.net/10495/30802
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.ispartofjournalabbrev.spa.fl_str_mv Braz. J. Phys.
dc.relation.citationendpage.spa.fl_str_mv 1041
dc.relation.citationissue.spa.fl_str_mv 3b
dc.relation.citationstartpage.spa.fl_str_mv 1038
dc.relation.citationvolume.spa.fl_str_mv 36
dc.relation.ispartofjournal.spa.fl_str_mv Brazilian Journal of Physics
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dc.publisher.spa.fl_str_mv Sociedade Brasileira de Física
dc.publisher.place.spa.fl_str_mv São Paulo, Brasil
institution Universidad de Antioquia
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spelling Duque Echeverri, Carlos AlbertoOliveira, Luiz EduardoLeyva, Melquiades de DiosGrupo de Materia Condensada-UdeA2022-09-23T21:45:01Z2022-09-23T21:45:01Z2006Duque, CA, Oliveira, LE, & Dios-Leyva, M. de. (2006). Transiciones de huecos de electrones correlacionadas en pozos cuánticos de GaAs y GaAs-(Ga,Al)As a granel: efectos de los campos magnéticos eléctricos y en el plano aplicados. Revista Brasileña de Física , 36 (3b), 1038-1041. https://doi.org/10.1590/S0103-973320060006000640103-9733https://hdl.handle.net/10495/3080210.1590/S0103-973320060006000641678-4448ABSTRACT: The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1−xAlxAs quantum wells. The combined effects on the heterostructure properties of the applied crossed electric/magnetic fields together with the direct coupling between the exciton center of mass and internal exciton motions may be dealt with via a simple parameter representing the distance between the electron and hole magnetic parabolas. Calculations lead to the expected behavior for the exciton dispersion in a wide range of the crossed electric/magnetic fields, and present theoretical results are found in good agreement with available experimental measurements.COL00333194application/pdfengSociedade Brasileira de FísicaSão Paulo, Brasilhttp://creativecommons.org/licenses/by-nc/2.5/co/https://creativecommons.org/licenses/by-nc/4.0/info:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: Effects of applied electric and in-plane magnetic fieldsArtículo de investigaciónhttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARThttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionCampos MagnéticosMagnetic fieldsPozos cuánticosQuantum wellsCampos eléctricosElectric fieldsTransiciones de excitonesBraz. J. 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