Donor impurity-related optical absorption spectra in GaAs-Ga1–xAlxAs quantum wells : hydrostatic pressure and Γ –X conduction band mixing effects

ABSTARCT: Using a variational procedure within the effective mass approximation, the mixing between the Γ and X conduction band valleys in GaAs-Ga1–xAlxAs quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acceptor binding energy and impurity-related transition energies are calculated and comparisons with available experimental data are presented. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

• Autores: Mora Ramos, Miguel Eduardo; López Ríos, Sonia Yaneth; Duque Echeverri, Carlos Alberto; Velasco, V. R.
• Tipo de recurso: Article of investigation
• Fecha de publicación: 2007
• Institución: Universidad de Antioquia
• Repositorio: Repositorio UdeA
• Idioma: eng
• OAI Identifier: oai:bibliotecadigital.udea.edu.co:10495/4834
• Acceso en línea: http://hdl.handle.net/10495/4834
• Palabra clave: Óptica; Optics; Física; Physics; Hidrostática; Hydrostatics; http://vocabularies.unesco.org/thesaurus/concept129; http://vocabularies.unesco.org/thesaurus/concept132
• Rights: openAccess
• License: https://creativecommons.org/licenses/by-nd-nc/4.0/