The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well
ABSTRACT: We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in GaxIn1−xNyAs1−y/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We h...
- Autores:
-
Duque Echeverri, Carlos Alberto
Ungan, F.
Kasapoglu, E.
Yesilgul, U.
Kasapoğlu, Esin
Sökmen, Ismail
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2011
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/31007
- Acceso en línea:
- https://hdl.handle.net/10495/31007
- Palabra clave:
- Pozos cuánticos
Quantum wells
Lasers
Campo láser
Estados ligados
- Rights
- openAccess
- License
- https://creativecommons.org/licenses/by/4.0/
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The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well |
| title |
The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well |
| spellingShingle |
The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well Pozos cuánticos Quantum wells Lasers Campo láser Estados ligados |
| title_short |
The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well |
| title_full |
The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well |
| title_fullStr |
The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well |
| title_full_unstemmed |
The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well |
| title_sort |
The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well |
| dc.creator.fl_str_mv |
Duque Echeverri, Carlos Alberto Ungan, F. Kasapoglu, E. Yesilgul, U. Kasapoğlu, Esin Sökmen, Ismail |
| dc.contributor.author.none.fl_str_mv |
Duque Echeverri, Carlos Alberto Ungan, F. Kasapoglu, E. Yesilgul, U. Kasapoğlu, Esin Sökmen, Ismail |
| dc.contributor.researchgroup.spa.fl_str_mv |
Grupo de Materia Condensada-UdeA |
| dc.subject.lemb.none.fl_str_mv |
Pozos cuánticos Quantum wells Lasers |
| topic |
Pozos cuánticos Quantum wells Lasers Campo láser Estados ligados |
| dc.subject.proposal.spa.fl_str_mv |
Campo láser Estados ligados |
| description |
ABSTRACT: We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in GaxIn1−xNyAs1−y/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides. |
| publishDate |
2011 |
| dc.date.issued.none.fl_str_mv |
2011 |
| dc.date.accessioned.none.fl_str_mv |
2022-09-30T20:48:36Z |
| dc.date.available.none.fl_str_mv |
2022-09-30T20:48:36Z |
| dc.type.spa.fl_str_mv |
Artículo de investigación |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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https://purl.org/redcol/resource_type/ART |
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http://purl.org/coar/version/c_970fb48d4fbd8a85 |
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info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
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http://purl.org/coar/resource_type/c_2df8fbb1 |
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publishedVersion |
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1434-6028 |
| dc.identifier.uri.none.fl_str_mv |
https://hdl.handle.net/10495/31007 |
| dc.identifier.doi.none.fl_str_mv |
10.1140/epjb/e2011-10902-y |
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1434-6036 |
| identifier_str_mv |
1434-6028 10.1140/epjb/e2011-10902-y 1434-6036 |
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https://hdl.handle.net/10495/31007 |
| dc.language.iso.spa.fl_str_mv |
eng |
| language |
eng |
| dc.relation.ispartofjournalabbrev.spa.fl_str_mv |
Eur. Phys. J. B. |
| dc.relation.citationendpage.spa.fl_str_mv |
93 |
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89 |
| dc.relation.citationvolume.spa.fl_str_mv |
80 |
| dc.relation.ispartofjournal.spa.fl_str_mv |
European Physical Journal B |
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https://creativecommons.org/licenses/by/4.0/ |
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http://creativecommons.org/licenses/by/2.5/co/ |
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info:eu-repo/semantics/openAccess |
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application/pdf |
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Springer |
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Les Ulis, Francia |
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Universidad de Antioquia |
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Duque Echeverri, Carlos AlbertoUngan, F.Kasapoglu, E.Yesilgul, U.Kasapoğlu, EsinSökmen, IsmailGrupo de Materia Condensada-UdeA2022-09-30T20:48:36Z2022-09-30T20:48:36Z20111434-6028https://hdl.handle.net/10495/3100710.1140/epjb/e2011-10902-y1434-6036ABSTRACT: We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in GaxIn1−xNyAs1−y/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides.COL00333195application/pdfengSpringerLes Ulis, Franciahttps://creativecommons.org/licenses/by/4.0/http://creativecommons.org/licenses/by/2.5/co/info:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum wellArtículo de investigaciónhttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARThttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionPozos cuánticosQuantum wellsLasersCampo láserEstados ligadosEur. Phys. J. 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