The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well

ABSTRACT: We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in GaxIn1−xNyAs1−y/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We h...

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Autores:
Duque Echeverri, Carlos Alberto
Ungan, F.
Kasapoglu, E.
Yesilgul, U.
Kasapoğlu, Esin
Sökmen, Ismail
Tipo de recurso:
Article of investigation
Fecha de publicación:
2011
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/31007
Acceso en línea:
https://hdl.handle.net/10495/31007
Palabra clave:
Pozos cuánticos
Quantum wells
Lasers
Campo láser
Estados ligados
Rights
openAccess
License
https://creativecommons.org/licenses/by/4.0/
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dc.title.spa.fl_str_mv The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well
title The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well
spellingShingle The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well
Pozos cuánticos
Quantum wells
Lasers
Campo láser
Estados ligados
title_short The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well
title_full The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well
title_fullStr The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well
title_full_unstemmed The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well
title_sort The effects of the intense laser field on bound states in GaxIn1−xNyAs1−y/GaAs single quantum well
dc.creator.fl_str_mv Duque Echeverri, Carlos Alberto
Ungan, F.
Kasapoglu, E.
Yesilgul, U.
Kasapoğlu, Esin
Sökmen, Ismail
dc.contributor.author.none.fl_str_mv Duque Echeverri, Carlos Alberto
Ungan, F.
Kasapoglu, E.
Yesilgul, U.
Kasapoğlu, Esin
Sökmen, Ismail
dc.contributor.researchgroup.spa.fl_str_mv Grupo de Materia Condensada-UdeA
dc.subject.lemb.none.fl_str_mv Pozos cuánticos
Quantum wells
Lasers
topic Pozos cuánticos
Quantum wells
Lasers
Campo láser
Estados ligados
dc.subject.proposal.spa.fl_str_mv Campo láser
Estados ligados
description ABSTRACT: We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in GaxIn1−xNyAs1−y/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. We hope that our results can stimulate further investigations of the related physics, as well as device applications of group-III nitrides.
publishDate 2011
dc.date.issued.none.fl_str_mv 2011
dc.date.accessioned.none.fl_str_mv 2022-09-30T20:48:36Z
dc.date.available.none.fl_str_mv 2022-09-30T20:48:36Z
dc.type.spa.fl_str_mv Artículo de investigación
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dc.identifier.issn.none.fl_str_mv 1434-6028
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/10495/31007
dc.identifier.doi.none.fl_str_mv 10.1140/epjb/e2011-10902-y
dc.identifier.eissn.none.fl_str_mv 1434-6036
identifier_str_mv 1434-6028
10.1140/epjb/e2011-10902-y
1434-6036
url https://hdl.handle.net/10495/31007
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.ispartofjournalabbrev.spa.fl_str_mv Eur. Phys. J. B.
dc.relation.citationendpage.spa.fl_str_mv 93
dc.relation.citationstartpage.spa.fl_str_mv 89
dc.relation.citationvolume.spa.fl_str_mv 80
dc.relation.ispartofjournal.spa.fl_str_mv European Physical Journal B
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dc.publisher.spa.fl_str_mv Springer
dc.publisher.place.spa.fl_str_mv Les Ulis, Francia
institution Universidad de Antioquia
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spelling Duque Echeverri, Carlos AlbertoUngan, F.Kasapoglu, E.Yesilgul, U.Kasapoğlu, EsinSökmen, IsmailGrupo de Materia Condensada-UdeA2022-09-30T20:48:36Z2022-09-30T20:48:36Z20111434-6028https://hdl.handle.net/10495/3100710.1140/epjb/e2011-10902-y1434-6036ABSTRACT: We have investigated the effects of the intense laser field and nitrogen concentration on bound state energy levels in GaxIn1−xNyAs1−y/GaAs quantum well. The results show that both intense laser field and N-incorporation into the GaInNAs have strong influences on carrier localization. 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