Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure
ABSTRACT: The mixing between the Γ and X conduction-band valleys in GaAs-Ga1−xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy tra...
- Autores:
-
López Ríos, Sonia Yaneth
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2008
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/31001
- Acceso en línea:
- https://hdl.handle.net/10495/31001
https://www.springer.com/journal/10051
- Palabra clave:
- Pozos cuánticos
Quantum wells
III-V semiconductors
- Rights
- openAccess
- License
- http://creativecommons.org/licenses/by/2.5/co/