Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure

ABSTRACT: The mixing between the Γ and X conduction-band valleys in GaAs-Ga1−xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy tra...

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Autores:
López Ríos, Sonia Yaneth
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto
Tipo de recurso:
Article of investigation
Fecha de publicación:
2008
Institución:
Universidad de Antioquia
Repositorio:
Repositorio UdeA
Idioma:
eng
OAI Identifier:
oai:bibliotecadigital.udea.edu.co:10495/31001
Acceso en línea:
https://hdl.handle.net/10495/31001
https://www.springer.com/journal/10051
Palabra clave:
Pozos cuánticos
Quantum wells
Presión hidrostática
Hydrostatic pressure
Banda de conducción
Conduction band
III-V semiconductors
Fotoluminiscencia
Rights
openAccess
License
http://creativecommons.org/licenses/by/2.5/co/
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dc.title.spa.fl_str_mv Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure
title Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure
spellingShingle Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure
Pozos cuánticos
Quantum wells
Presión hidrostática
Hydrostatic pressure
Banda de conducción
Conduction band
III-V semiconductors
Fotoluminiscencia
title_short Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure
title_full Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure
title_fullStr Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure
title_full_unstemmed Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure
title_sort Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressure
dc.creator.fl_str_mv López Ríos, Sonia Yaneth
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto
dc.contributor.author.none.fl_str_mv López Ríos, Sonia Yaneth
Mora Ramos, Miguel Eduardo
Duque Echeverri, Carlos Alberto
dc.contributor.researchgroup.spa.fl_str_mv Grupo de Materia Condensada-UdeA
dc.subject.lemb.none.fl_str_mv Pozos cuánticos
Quantum wells
Presión hidrostática
Hydrostatic pressure
Banda de conducción
Conduction band
topic Pozos cuánticos
Quantum wells
Presión hidrostática
Hydrostatic pressure
Banda de conducción
Conduction band
III-V semiconductors
Fotoluminiscencia
dc.subject.proposal.spa.fl_str_mv III-V semiconductors
Fotoluminiscencia
description ABSTRACT: The mixing between the Γ and X conduction-band valleys in GaAs-Ga1−xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ − X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ − X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1−xAlxAs quantum wells.
publishDate 2008
dc.date.issued.none.fl_str_mv 2008
dc.date.accessioned.none.fl_str_mv 2022-09-30T20:13:40Z
dc.date.available.none.fl_str_mv 2022-09-30T20:13:40Z
dc.type.spa.fl_str_mv Artículo de investigación
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dc.identifier.issn.none.fl_str_mv 1434-6028
dc.identifier.uri.none.fl_str_mv https://hdl.handle.net/10495/31001
dc.identifier.doi.none.fl_str_mv 10.1140/epjb/e2008-00161-6
dc.identifier.eissn.none.fl_str_mv 1434-6036
dc.identifier.url.spa.fl_str_mv https://www.springer.com/journal/10051
identifier_str_mv 1434-6028
10.1140/epjb/e2008-00161-6
1434-6036
url https://hdl.handle.net/10495/31001
https://www.springer.com/journal/10051
dc.language.iso.spa.fl_str_mv eng
language eng
dc.relation.ispartofjournalabbrev.spa.fl_str_mv Eur. Phys. J. B.
dc.relation.citationendpage.spa.fl_str_mv 261
dc.relation.citationstartpage.spa.fl_str_mv 257
dc.relation.citationvolume.spa.fl_str_mv 62
dc.relation.ispartofjournal.spa.fl_str_mv European Physical Journal B
dc.rights.uri.*.fl_str_mv http://creativecommons.org/licenses/by/2.5/co/
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dc.publisher.spa.fl_str_mv Springer
dc.publisher.place.spa.fl_str_mv Les Ulis, Francia
institution Universidad de Antioquia
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spelling López Ríos, Sonia YanethMora Ramos, Miguel EduardoDuque Echeverri, Carlos AlbertoGrupo de Materia Condensada-UdeA2022-09-30T20:13:40Z2022-09-30T20:13:40Z20081434-6028https://hdl.handle.net/10495/3100110.1140/epjb/e2008-00161-61434-6036https://www.springer.com/journal/10051ABSTRACT: The mixing between the Γ and X conduction-band valleys in GaAs-Ga1−xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ − X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ − X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1−xAlxAs quantum wells.COL00333195application/pdfengSpringerLes Ulis, Franciahttp://creativecommons.org/licenses/by/2.5/co/https://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Gamma-X mixing in GaAs-Ga(1-x)Al(x)As quantum wells under hydrostatic pressureArtículo de investigaciónhttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARThttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionPozos cuánticosQuantum wellsPresión hidrostáticaHydrostatic pressureBanda de conducciónConduction bandIII-V semiconductorsFotoluminiscenciaEur. Phys. J. 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