Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnO
ABSTRACT: The doping response of the prototypical transparent oxides NiO (p-type), ZnO (n-type), and MgO (insulating) is caused by spontaneous formation of compensating centers, leading to Fermi-level pinning at critical Fermi energies. We study the doping principles in these oxides by first-princip...
- Autores:
-
Lany, Stephan
Osorio Guillén, Jorge Mario
Zunger, Alex
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2007
- Institución:
- Universidad de Antioquia
- Repositorio:
- Repositorio UdeA
- Idioma:
- eng
- OAI Identifier:
- oai:bibliotecadigital.udea.edu.co:10495/8384
- Acceso en línea:
- http://hdl.handle.net/10495/8384
- Palabra clave:
- Electrones
Electrons
Ionización
Ionization
Óxidos
Oxides
Cationes
Cations
Semiconductores
Semiconductors
Niveles de Fermi
- Rights
- openAccess
- License
- https://creativecommons.org/licenses/by-nc-nd/4.0/
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Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnO |
| title |
Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnO |
| spellingShingle |
Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnO Electrones Electrons Ionización Ionization Óxidos Oxides Cationes Cations Semiconductores Semiconductors Niveles de Fermi |
| title_short |
Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnO |
| title_full |
Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnO |
| title_fullStr |
Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnO |
| title_full_unstemmed |
Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnO |
| title_sort |
Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnO |
| dc.creator.fl_str_mv |
Lany, Stephan Osorio Guillén, Jorge Mario Zunger, Alex |
| dc.contributor.author.none.fl_str_mv |
Lany, Stephan Osorio Guillén, Jorge Mario Zunger, Alex |
| dc.contributor.researchgroup.spa.fl_str_mv |
Ciencia de los Materiales |
| dc.subject.decs.none.fl_str_mv |
Electrones Electrons |
| topic |
Electrones Electrons Ionización Ionization Óxidos Oxides Cationes Cations Semiconductores Semiconductors Niveles de Fermi |
| dc.subject.lemb.none.fl_str_mv |
Ionización Ionization Óxidos Oxides Cationes Cations Semiconductores Semiconductors |
| dc.subject.proposal.spa.fl_str_mv |
Niveles de Fermi |
| description |
ABSTRACT: The doping response of the prototypical transparent oxides NiO (p-type), ZnO (n-type), and MgO (insulating) is caused by spontaneous formation of compensating centers, leading to Fermi-level pinning at critical Fermi energies. We study the doping principles in these oxides by first-principles calculations of carrier-producing or-compensating defects and of the natural band offsets, and identify the dopability trends with the ionization potentials and electron affinities of the oxides. We find that the room-temperature free-hole density of cation-deficient NiO is limited by a too large ionization energy of the Ni vacancy, but it can be strongly increased by extrinsic dopants with shallower acceptor levels. |
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2007 |
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2007 |
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2017-09-27T22:17:31Z |
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2017-09-27T22:17:31Z |
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Artículo de investigación |
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info:eu-repo/semantics/article |
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Lany, S., Osorio Guillén, J. M., & Zunger, A. (2007). Origins of the doping asymmetry in oxides: Hole doping in NiO versus electron doping in ZnO. Physical Review, B: Condensed Matter, 75(241203(R)), 1-4. DOI:PhysRevB.75.241203 |
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2469-9969 |
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http://hdl.handle.net/10495/8384 |
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2469-9969 E |
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2469-9950 |
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Lany, S., Osorio Guillén, J. M., & Zunger, A. (2007). Origins of the doping asymmetry in oxides: Hole doping in NiO versus electron doping in ZnO. Physical Review, B: Condensed Matter, 75(241203(R)), 1-4. DOI:PhysRevB.75.241203 2469-9969 2469-9969 E 2469-9950 |
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http://hdl.handle.net/10495/8384 |
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eng |
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eng |
| dc.relation.ispartofjournalabbrev.spa.fl_str_mv |
Phys Rev B |
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4 |
| dc.relation.citationissue.spa.fl_str_mv |
241203(R) |
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1 |
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75 |
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Physical Review B: Condensed Matter |
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Lany, StephanOsorio Guillén, Jorge MarioZunger, AlexCiencia de los Materiales2017-09-27T22:17:31Z2017-09-27T22:17:31Z2007Lany, S., Osorio Guillén, J. M., & Zunger, A. (2007). Origins of the doping asymmetry in oxides: Hole doping in NiO versus electron doping in ZnO. Physical Review, B: Condensed Matter, 75(241203(R)), 1-4. DOI:PhysRevB.75.2412032469-9969http://hdl.handle.net/10495/83842469-9969 E2469-9950ABSTRACT: The doping response of the prototypical transparent oxides NiO (p-type), ZnO (n-type), and MgO (insulating) is caused by spontaneous formation of compensating centers, leading to Fermi-level pinning at critical Fermi energies. We study the doping principles in these oxides by first-principles calculations of carrier-producing or-compensating defects and of the natural band offsets, and identify the dopability trends with the ionization potentials and electron affinities of the oxides. We find that the room-temperature free-hole density of cation-deficient NiO is limited by a too large ionization energy of the Ni vacancy, but it can be strongly increased by extrinsic dopants with shallower acceptor levels.COL0002401application/pdfengThe American Physical SocietyEstados Unidoshttps://creativecommons.org/licenses/by-nc-nd/4.0/http://creativecommons.org/licenses/by-nc-nd/2.5/co/Atribución-NoComercial-SinDerivadas 2.5 Colombiainfo:eu-repo/semantics/openAccesshttp://purl.org/coar/access_right/c_abf2Origins of the doping asymmetry in oxides : hole doping in NiO versus electron doping in ZnOArtículo de investigaciónhttp://purl.org/coar/resource_type/c_2df8fbb1https://purl.org/redcol/resource_type/ARThttp://purl.org/coar/version/c_970fb48d4fbd8a85http://purl.org/coar/version/c_71e4c1898caa6e32info:eu-repo/semantics/articleElectronesElectronsIonizaciónIonizationÓxidosOxidesCationesCationsSemiconductoresSemiconductorsNiveles de FermiPhys Rev B4241203(R)175Physical Review B: Condensed MatterPublicationORIGINALOsorioJorge_2007_OriginsDopingAsymmetry.pdfOsorioJorge_2007_OriginsDopingAsymmetry.pdfArtículo de investigaciónapplication/pdf183872https://bibliotecadigital.udea.edu.co/bitstreams/91e17d6c-183d-48f9-9ee3-02cdaa3cae74/downloaddff3ffec70ab640c8dd3c5f340598186MD51trueAnonymousREADCC-LICENSElicense_urllicense_urltext/plain; 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