Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching

We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current – voltage I(V) and capacitance – voltage C(V) characteristics were used for the study of the electri...

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Autores:

Chavarría, M. A.
Fonthal Rico, Faruk

Tipo de recurso:

Article of investigation

Fecha de publicación:

2016

Institución:

Universidad Autónoma de Occidente

Repositorio:

RED: Repositorio Educativo Digital UAO

Idioma:

eng

OAI Identifier:

oai:red.uao.edu.co:10614/15902

Acceso en línea:

https://hdl.handle.net/10614/15902
https://red.uao.edu.co/

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Derechos reservados - The Electrochemical Society, 2016