Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching
We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current – voltage I(V) and capacitance – voltage C(V) characteristics were used for the study of the electri...
- Autores:
-
Chavarría, M. A.
Fonthal Rico, Faruk
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2016
- Institución:
- Universidad Autónoma de Occidente
- Repositorio:
- RED: Repositorio Educativo Digital UAO
- Idioma:
- eng
- OAI Identifier:
- oai:red.uao.edu.co:10614/15902
- Acceso en línea:
- https://hdl.handle.net/10614/15902
https://red.uao.edu.co/
- Palabra clave:
- Rights
- closedAccess
- License
- Derechos reservados - The Electrochemical Society, 2016
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Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching |
| title |
Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching |
| spellingShingle |
Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching |
| title_short |
Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching |
| title_full |
Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching |
| title_fullStr |
Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching |
| title_full_unstemmed |
Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching |
| title_sort |
Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching |
| dc.creator.fl_str_mv |
Chavarría, M. A. Fonthal Rico, Faruk |
| dc.contributor.author.none.fl_str_mv |
Chavarría, M. A. Fonthal Rico, Faruk |
| description |
We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current – voltage I(V) and capacitance – voltage C(V) characteristics were used for the study of the electrical properties of this heterojunction. A deeper understanding of the physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found in the heterojunction important conduction mechanisms: the resonant tunnelling, SCLC and the dielectric relaxation due to the pores layers at high frequencies |
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2016 |
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2016 |
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2024-11-14T20:41:40Z |
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2024-11-14T20:41:40Z |
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Artículo de revista |
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Chavaría, M. A. y Fonthal Rico, Faruk. (2016). Electrical investigation of porous silicon/p-Si heterojunction prepared by electrochemical etching. ECS Journal of Solid State Science and Technology. 5(4) p.p. 3172-3175. DOI 10.1149/2.0241604jss |
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21628777 |
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https://hdl.handle.net/10614/15902 |
| dc.identifier.doi.spa.fl_str_mv |
DOI 10.1149/2.0241604jss |
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Universidad Autónoma de Occidente |
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Respositorio Educativo Digital UAO |
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https://red.uao.edu.co/ |
| identifier_str_mv |
Chavaría, M. A. y Fonthal Rico, Faruk. (2016). Electrical investigation of porous silicon/p-Si heterojunction prepared by electrochemical etching. ECS Journal of Solid State Science and Technology. 5(4) p.p. 3172-3175. DOI 10.1149/2.0241604jss 21628777 DOI 10.1149/2.0241604jss Universidad Autónoma de Occidente Respositorio Educativo Digital UAO |
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https://hdl.handle.net/10614/15902 https://red.uao.edu.co/ |
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eng |
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eng |
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3175 |
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4 |
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3172 |
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5 |
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ECS Journal of Solid State Science and Technology |
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1. X. G. Zhang, J. Elec. Soc., 151, C69 (2004). 2. A. Korcala, W. Bała, A. Bratkowski, P. Borowski, and Z. Łukasiak, Op. Mat., 28, 143 (2006). 3. M. Theodoropoulou, P. K. Karahaliou, C. A. Krontiras, S. N. Georga, N. Xanthopoulos, M. N. Pisanias, C. Tsamis, and A. G. Nassiopoulou, J. Appl. Phys., 96, 7637 (2004). 4. F. Fonthal and M. Chavarria, Phys. Status Solidi C, 8, 1913 (2011). 5. A. Cherif, S. Jomni, R. Hannachi, and L. Beji, Physica B, 409, 10 (2013). 6. R. S Dariani and F. Tavakoli, Physica B, 456, 312 (2015). 7. M. C. Feliciangeli, G. Conte, and M. C. Rossi, Sens. Actuators B, 126, 271 (2007). 8. C. A. Betty, R. Lal, and J. V. Yakhmi, Electrochimica Acta, 54, 3781 (2009). 9. C. RoyChaudhuri, Sens. Actuators B, 210, 310 (2015). 10. F. A. Harraz, Sens. Actuators B, 202, 897 (2014). 11. O. Syshchyk, V. A. Skryshevsky, O. O. Soldatkin, and A. P. Soldatkin, Biosensors and Bioelectronics, 66, 89 (2015). 12. S. Dhanekar and S. Jain, Biosensors and Bioelectronics, 41, 54 (2013). 13. F. Fonthal, T. Trifonov, A. Rodriguez, C. Goyes, X. Vilanova, and J. Pallares, in IEEE Conference on Fourth Congress of Electronics, Robotics and Automotive Mechanics, Silvia Ceballos, Editor, p. 170, IEEE Computer Society Proceedings, Los Alamitos, California (2007). 14. I. Bazrafkan and R. S. Dariani, Physica B, 404, 1638 (2009). 15. F. Fonthal, Electro ceramic properties of porous silicon thin films on p-type crystalline silicon, in Advances and Applications in Electroceramics: Ceramic Transactions Series, 226, K. M. Nair, Q. Jia, and S. Priya, Editors, p. 19, Wiley, New Jersey, (2011). 16. L. F. Marsal, J. Pallares, X. Correig, J. Calderer, and R. Alcubilla, ` Semicond. Sci. Technol., 11, 1209 (1996). 17. A. M. Rossi and H. G. Bohn, Phys. Status Solidi A, 202, 1644 (2005). 18. A. K. Jonscher, Dielectric Relaxation in Solids, Chelsea Dielectrics Press, London (1983). 19. M. Chavarria and F. Fonthal, in Advances in Electroceramic Materials: Ceramic Transactions Series, 204, K. M. Nair, D. Suvorov, R. W. Schwarts, and R. Guo, Editors, p. 113, Wiley, New Jersey (2009). |
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Derechos reservados - The Electrochemical Society, 2016 |
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Chavarría, M. A.Fonthal Rico, Farukvirtual::5769-12024-11-14T20:41:40Z2024-11-14T20:41:40Z2016Chavaría, M. A. y Fonthal Rico, Faruk. (2016). Electrical investigation of porous silicon/p-Si heterojunction prepared by electrochemical etching. ECS Journal of Solid State Science and Technology. 5(4) p.p. 3172-3175. DOI 10.1149/2.0241604jss21628777https://hdl.handle.net/10614/15902DOI 10.1149/2.0241604jssUniversidad Autónoma de OccidenteRespositorio Educativo Digital UAOhttps://red.uao.edu.co/We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current – voltage I(V) and capacitance – voltage C(V) characteristics were used for the study of the electrical properties of this heterojunction. A deeper understanding of the physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found in the heterojunction important conduction mechanisms: the resonant tunnelling, SCLC and the dielectric relaxation due to the pores layers at high frequencies4 páginasapplication/pdfengThe Electrochemical SocietyUnited StatesDerechos reservados - The Electrochemical Society, 2016https://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/closedAccessAtribución-NoComercial-SinDerivadas 4.0 Internacional (CC BY-NC-ND 4.0)http://purl.org/coar/access_right/c_14cbElectrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical EtchingArtículo de revistahttp://purl.org/coar/resource_type/c_2df8fbb1Textinfo:eu-repo/semantics/articlehttp://purl.org/redcol/resource_type/ARTinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/version/c_970fb48d4fbd8a853175431725ECS Journal of Solid State Science and Technology 1. X. G. Zhang, J. Elec. Soc., 151, C69 (2004). 2. A. Korcala, W. Bała, A. Bratkowski, P. Borowski, and Z. Łukasiak, Op. Mat., 28, 143 (2006). 3. M. Theodoropoulou, P. K. Karahaliou, C. A. Krontiras, S. N. Georga, N. Xanthopoulos, M. N. Pisanias, C. Tsamis, and A. G. Nassiopoulou, J. Appl. Phys., 96, 7637 (2004). 4. F. Fonthal and M. Chavarria, Phys. Status Solidi C, 8, 1913 (2011). 5. A. Cherif, S. Jomni, R. Hannachi, and L. Beji, Physica B, 409, 10 (2013). 6. R. S Dariani and F. Tavakoli, Physica B, 456, 312 (2015). 7. M. C. Feliciangeli, G. Conte, and M. C. Rossi, Sens. Actuators B, 126, 271 (2007). 8. C. A. Betty, R. Lal, and J. V. Yakhmi, Electrochimica Acta, 54, 3781 (2009). 9. C. RoyChaudhuri, Sens. Actuators B, 210, 310 (2015). 10. F. A. Harraz, Sens. Actuators B, 202, 897 (2014). 11. O. Syshchyk, V. A. Skryshevsky, O. O. Soldatkin, and A. P. Soldatkin, Biosensors and Bioelectronics, 66, 89 (2015). 12. S. Dhanekar and S. Jain, Biosensors and Bioelectronics, 41, 54 (2013). 13. F. Fonthal, T. Trifonov, A. Rodriguez, C. Goyes, X. Vilanova, and J. Pallares, in IEEE Conference on Fourth Congress of Electronics, Robotics and Automotive Mechanics, Silvia Ceballos, Editor, p. 170, IEEE Computer Society Proceedings, Los Alamitos, California (2007). 14. I. Bazrafkan and R. S. Dariani, Physica B, 404, 1638 (2009). 15. F. Fonthal, Electro ceramic properties of porous silicon thin films on p-type crystalline silicon, in Advances and Applications in Electroceramics: Ceramic Transactions Series, 226, K. M. Nair, Q. Jia, and S. Priya, Editors, p. 19, Wiley, New Jersey, (2011). 16. L. F. Marsal, J. Pallares, X. Correig, J. Calderer, and R. Alcubilla, ` Semicond. Sci. Technol., 11, 1209 (1996). 17. A. M. Rossi and H. G. Bohn, Phys. Status Solidi A, 202, 1644 (2005). 18. A. K. Jonscher, Dielectric Relaxation in Solids, Chelsea Dielectrics Press, London (1983). 19. M. Chavarria and F. Fonthal, in Advances in Electroceramic Materials: Ceramic Transactions Series, 204, K. M. Nair, D. Suvorov, R. W. Schwarts, and R. Guo, Editors, p. 113, Wiley, New Jersey (2009).Comunidad generalPublication2bf30a66-1e41-42a5-8415-189ea7ccdfa8virtual::5769-12bf30a66-1e41-42a5-8415-189ea7ccdfa8virtual::5769-1https://scholar.google.com/citations?user=zxVYtU0AAAAJ&hl=envirtual::5769-10000-0002-9331-0491virtual::5769-1https://scienti.minciencias.gov.co/cvlac/visualizador/generarCurriculoCv.do?cod_rh=0000895857virtual::5769-1ORIGINALLICENSElicense.txtlicense.txttext/plain; charset=utf-81672https://red.uao.edu.co/bitstreams/e179fdfb-7c54-4fbb-921c-8e0fdc2bb9ee/download6987b791264a2b5525252450f99b10d1MD5210614/15902oai:red.uao.edu.co:10614/159022024-11-14 15:46:47.636https://creativecommons.org/licenses/by-nc-nd/4.0/Derechos reservados - The Electrochemical Society, 2016metadata.onlyhttps://red.uao.edu.coRepositorio Digital Universidad Autonoma de Occidenterepositorio@uao.edu.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 |