Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching
We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current – voltage I(V) and capacitance – voltage C(V) characteristics were used for the study of the electri...
- Autores:
-
Chavarría, M. A.
Fonthal Rico, Faruk
- Tipo de recurso:
- Article of investigation
- Fecha de publicación:
- 2016
- Institución:
- Universidad Autónoma de Occidente
- Repositorio:
- RED: Repositorio Educativo Digital UAO
- Idioma:
- eng
- OAI Identifier:
- oai:red.uao.edu.co:10614/15902
- Acceso en línea:
- https://hdl.handle.net/10614/15902
https://red.uao.edu.co/
- Palabra clave:
- Rights
- closedAccess
- License
- Derechos reservados - The Electrochemical Society, 2016
| Summary: | We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current – voltage I(V) and capacitance – voltage C(V) characteristics were used for the study of the electrical properties of this heterojunction. A deeper understanding of the physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found in the heterojunction important conduction mechanisms: the resonant tunnelling, SCLC and the dielectric relaxation due to the pores layers at high frequencies |
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